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| SMD Type Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection KI6968BEDQ(SI6968BEDQ) TSSOP-8 MOSFET IC www..com Features VDS=20V,rDS(on)=0.022 VDS=20V,rDS(on)=0.030 @VGS=4.5V,ID=6.5A @VGS=2.5V,ID=5.5A Unit: mm N-Channel * Typical value by design N-Channel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation TA = 25 TA = 70 Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient* t 10 sec TJ, Tstg Symbol RthJA RthJF Typ 72 100 55 TA = 25 TA = 70 IDM IS PD 1.5 1.5 0.96 -55 to 150 Max 83 120 70 /W Unit Symbol VDS VGS ID 6.5 5.5 30 1.0 1.0 0.64 W 10 secs Steady State 20 12 5.2 3.5 A Unit V Steady-State Maximum Junction-to-Foot (Drain) * Surface Mounted on FR4 Board, t Steady-State 10 sec. www.kexin.com.cn 1 SMD Type KI6968BEDQ(SI6968BEDQ) Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain-Source On-State Resistance Forward Transconductance* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Schottky Diode Forward Voltage* * Pulse test; pulse width 300 s, duty cycle Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs Qg Qgs Qgd td(on) tr td(off) tf VSD 2%. IS = 1.5 A, VGS = 0 V VDD = 10 V, RL = 10 ID = 1 A, VGEN = 4.5V, RG = 6 VDS = 10V, VGS = 4.5V, ID = 6.5A Testconditons VDS = VGS, ID = 250 iA VDS = 0 V, VGS = 4.5 V Min 0.6 IC MOSFET www..com Typ Max 1.6 200 1 25 Unit V nA A A A VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70 VDS 5 V, VGS = 4.5 V 30 0.0165 0.023 30 12 2.2 3.6 245 330 860 510 0.71 VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.5 A VDS = 10 V, ID = 6.5 A 0.022 0.030 S 18 nC nC nC 365 495 1300 765 1.2 ns ns ns ns V 2 www.kexin.com.cn |
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